1 ELM34414AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 50 c /w parameter symbol limit unit note drain-source voltage vds 30 v gate-source voltage vgs 20 v continuous drain current ta=25c id 15 a ta=90c 12 pulsed drain current idm 50 a 3 power dissipation ta=25c pd 2.5 w ta=90c 2.0 junction and storage temperature range tj, tstg -55 to 150 c ELM34414AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=30v ? id=15a ? rds(on) < 8m (vgs=10v) ? rds(on) < 12m (vgs=4.5v) 5 - single n-channel mosfet pin configuration circuit sop-8(top view) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 s g d
2 ELM34414AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs= 0v 1 a vds=20v, vgs= 0v, tj=55c 10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 1.0 1.5 3.0 v static drain-source on-resistance rds(on) vgs=10v, id= 15a 6.8 8.0 m 1 vgs = 4.5v, id =12 a 8.8 12.0 m forward transconductance gfs vds =1 5v, id =15 a 60 s 1 diode forward voltage vsd if = 3a, vgs=0v 1.1 v 1 max. body -diode continuous current is 3 a pulsed body -diode current ism 6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=15v, f=1mhz 1900 pf output capacitance coss 530 pf reverse transfer capacitance crss 120 pf switching parameters total gate charge qg vgs=10v, vds=15v, id=15a 18.0 28.0 nc 2 gate-source charge qgs 4.2 nc 2 gate-drain charge qgd 5.4 nc 2 turn - on delay time td(on) vgs=10v, vds=15v, id1a rl=15, rgen=6 10 ns 2 turn - on rise time tr 24 ns 2 turn - off delay time td(off) 48 ns 2 turn - off fall time tf 12 ns 2 body diode reverse recovery time trr if = 3a, dl/dt=100a/ s 50 80 ns ta=25 c note : 1. pulsed width300sec and duty cycle2%; 2. independent of operating temperature; 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. single n-channel mosfet 5 -
3 typical electrical and thermal characteristics ? ? ???????????? 3v 0 1 2 3 4 5 0 v ds - drain-to-source voltage(v) output characteristics 5 10 15 20 25 30 35 40 45 50 i d - drain current(a) v gs =10thru 4v 25c -55c t c =125c 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 35 40 transfer characteristics v gs - gate-to-source voltage(v) i d - drain current(a) 2.5 3.0 3.5 4.0 v gs =4.5v v gs =10v i d - drain current(a) r ds(on) - on-resistance( ? ) on-resistance vs. drain current 0 10 20 30 40 50 0.000 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 0 500 1000 1500 2000 2500 crss coss ciss v ds - drain-to-source voltage(v) c- capacitance(pf) capacitance f = 1 mhz v gs =0v 0 4 8 12 16 20 24 0 2 4 6 8 10 q g - total gate charge(nc) gate charge v gs - gate-to-source voltage(v) i d =15a v ds =10v -50 -25 0 25 50 75 100 125 150 0.50 0.75 1.00 1.25 1.50 1.75 2.00 v gs =10v t j - junction tem p erature ( c ) r ds(on) - on-resistance( ? ) (normalized) on-resistance vs. junction temperature i d =15a ??????? ?????? ???????????? ELM34414AA-N 5 - single n-channel mosfet
4 ? ???????????? 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 10 60 t j =150c t j =25c v sd - source-to-drain voltage(v) i s - source current(a) source-drain diode forward voltage on-resistance vs.gate-to-source voltage v gs - gate-to-source voltage(v) r ds(on) - on-resistance( ? ) 0 2 4 6 8 10 0.000 0.008 0.016 0.024 0.032 0.040 i d =15a t j - temperature( c) i d = 250 ? a v gs(th) variance(v) threshold voltage -50 -25 0 25 50 75 100 125 150 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0 10 20 30 40 50 t a =25c 10 -2 10 -1 1 power(w) time(sec) 10 single pulse power 0.1 1 10 100 0.01 0.1 1 100 10 100ms 1s 10s limited by r ds(on) i d - drain current(a) v ds - drain-to-source voltage(v) safe operating area, junction-to ambient 100 ? s,10 ? s 1ms 10ms t a =25c single pulse dc,100s ?????? ???????????? ELM34414AA-N single n-channel mosfet 5 -
5 ? ? 10 -4 10 -3 10 -2 10 -1 1 10 100 600 t 2 t 1 p dm notes: 0.01 0.1 1 2 0.02 0.05 0.1 0.2 duty cycle = 0.5 single pulse normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 1. duty cycle, d ? = 2. r ? ? ja(t) = 50 ? cw 3. t jm - ta = ? p dm ? * ? r ? ? ja(t) 4. surface mounted t1 t2 ???????????? ?????? ???????????? ELM34414AA-N 5 - single n-channel mosfet
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